On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs PHEMTs

On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs PHEMTs

Blog Article

The study of different stress on device characteristics of AlGaAs/InGaAs/GaAs PHEMTs has been researched and developed in this In Ground Product (Solar) report.Many catastrophic degradation mechanisms such as hot-electron, gate-drain breakdown, IDS, IG , VP and gate Schottky barrier effects are discussed in detail.In addition, the Planner accelerated testing of the temperature-dependent effects on ID ,Gm and Schottky barrier are examined.